Quick Detail:
< High-power GaAs FET (small signal gain stage)>
Description:
The MGF0906B, GaAs FET with an N-channel schottky gate, is designed for use in UHF band amplifiers.
Applications:
Class A operation
High output power
P1dB=37.0dBm(TYP.) @f=2.3GHz
High power gain
GLP=11.0dB(TYP.) @f=2.3GHz
High power added efficiency
P.A.E =40%(TYP.) @f=2.3GHz,P1dB
Hermetically sealed metal-ceramic package with ceramic lid
Specifications:
|
part no.
|
MGF0906B
|
|
Manufacturer
|
TOSHIBA
|
|
supply ability
|
10000
|
|
datecode
|
10+
|
|
package
|
RF
|
|
remark
|
new and original stock
|
Competitive Advantage:
Warranty :180 days !
Free shipping: Order over $1000 win a free shipment fee
(goods weight below 3Kg) ,during 20130901-20130930 .
Why buy from us >>> Fast / Safely / Conveniently
• Mega Source is a Stock keeper and trade company of Electronic components .Our branches office include China, Hong Kong, Sigapore , Canada . Offer business, service, resourcing and information for our global member.
• Goods are ensured the highest quality possible and are delivered to our customers all over the world with speed and precision.
How to buy >>>
• Contact us by email & sent your inquire with your Transport destination .
• Online chat, the commissioner would be responded ASAP.
Service >>>
• Forwarder Shipment to world-wide, DHL ,TNT ,UPS,FEDEX etc. buyer don`t need to worry about shipping problem
• We will try to respond as quickly as possible. But due to time zone difference, please allow up to 24 hours to get your mail replied. The products were tested by some devices or software, we ensure that there is no quality problems.
• We are committed to providing fast, convenient and safe transportation service to global buyer.
Product Tags:
|
|
IGBT Power Module MGF0906B - TOSHIBA - < High-power GaAs FET (small signal gain stage)> Images
|
